Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
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DGD0504FN-7
RFQ
VIEW
RFQ
1,836
In-stock
Diodes Incorporated IC GATE DVR HV 10-WDFN - Active Digi-Reel® Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad W-DFN3030-10 10 V ~ 20 V Synchronous Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 100V 70ns, 35ns
DGD0504FN-7
RFQ
VIEW
RFQ
1,739
In-stock
Diodes Incorporated IC GATE DVR HV 10-WDFN - Active Cut Tape (CT) Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad W-DFN3030-10 10 V ~ 20 V Synchronous Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 100V 70ns, 35ns
DGD0504FN-7
RFQ
VIEW
RFQ
3,220
In-stock
Diodes Incorporated IC GATE DVR HV 10-WDFN - Active Tape & Reel (TR) Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad W-DFN3030-10 10 V ~ 20 V Synchronous Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 100V 70ns, 35ns
DGD0503FN-7
RFQ
VIEW
RFQ
3,489
In-stock
Diodes Incorporated IC GATE DVR HV 10-WDFN - Active Digi-Reel® Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad W-DFN3030-10 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 100V 70ns, 35ns
DGD0503FN-7
RFQ
VIEW
RFQ
3,654
In-stock
Diodes Incorporated IC GATE DVR HV 10-WDFN - Active Cut Tape (CT) Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad W-DFN3030-10 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 100V 70ns, 35ns
DGD0503FN-7
RFQ
VIEW
RFQ
2,572
In-stock
Diodes Incorporated IC GATE DVR HV 10-WDFN - Active Tape & Reel (TR) Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 10-WFDFN Exposed Pad W-DFN3030-10 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 100V 70ns, 35ns