Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
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IRS21853SPBF
RFQ
VIEW
RFQ
1,020
In-stock
Infineon Technologies IC DVR DUAL HIGH SIDE 16-SOIC - Obsolete Tube Non-Inverting -55°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.154", 3.90mm Width) 16-SOIC 10 V ~ 20 V Independent High-Side 2 IGBT, N-Channel MOSFET 0.6V, 3.5V 2A, 2A 600V 15ns, 15ns
IRS21853STRPBF
RFQ
VIEW
RFQ
3,888
In-stock
Infineon Technologies IC DRIVER HIGH SIDE DUAL 16-SOIC - Obsolete Digi-Reel® Non-Inverting -55°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.154", 3.90mm Width) 16-SOIC 10 V ~ 20 V Independent High-Side 2 IGBT, N-Channel MOSFET 0.6V, 3.5V 2A, 2A 600V 15ns, 15ns
IRS21853STRPBF
RFQ
VIEW
RFQ
3,435
In-stock
Infineon Technologies IC DRIVER HIGH SIDE DUAL 16-SOIC - Obsolete Cut Tape (CT) Non-Inverting -55°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.154", 3.90mm Width) 16-SOIC 10 V ~ 20 V Independent High-Side 2 IGBT, N-Channel MOSFET 0.6V, 3.5V 2A, 2A 600V 15ns, 15ns
IRS21853STRPBF
RFQ
VIEW
RFQ
2,065
In-stock
Infineon Technologies IC DRIVER HIGH SIDE DUAL 16-SOIC - Obsolete Tape & Reel (TR) Non-Inverting -55°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.154", 3.90mm Width) 16-SOIC 10 V ~ 20 V Independent High-Side 2 IGBT, N-Channel MOSFET 0.6V, 3.5V 2A, 2A 600V 15ns, 15ns
IXBD4411SI
RFQ
VIEW
RFQ
2,276
In-stock
IXYS IC HIGH SIDE DRIVER 16SOIC ISOSMART™ Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 16-SOIC (0.295", 7.50mm Width) 16-SOIC 10 V ~ 20 V Single High-Side 1 IGBT, N-Channel, P-Channel MOSFET 1V, 3.65V 2A, 2A 1200V 15ns, 15ns
IXBD4411PI
RFQ
VIEW
RFQ
1,249
In-stock
IXYS IC HIGH SIDE DRIVER 16DIP ISOSMART™ Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 16-DIP (0.300", 7.62mm) 16-DIP 10 V ~ 20 V Single High-Side 1 IGBT, N-Channel, P-Channel MOSFET 1V, 3.65V 2A, 2A 1200V 15ns, 15ns