Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
GLOBAL STOCKS
IR21084PBF
RFQ
VIEW
RFQ
3,098
In-stock
Infineon Technologies IC DRIVER HALF BRIDGE 14DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V 150ns, 50ns
IR21064PBF
RFQ
VIEW
RFQ
3,984
In-stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 14DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V 150ns, 50ns
IR21094
RFQ
VIEW
RFQ
1,092
In-stock
Infineon Technologies IC DRIVER HALF-BRIDGE 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Synchronous Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V 150ns, 50ns
98-0255
RFQ
VIEW
RFQ
1,170
In-stock
Infineon Technologies IC DRIVER HIGH/LOW DRIVER 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V 150ns, 50ns
IR21064
RFQ
VIEW
RFQ
838
In-stock
Infineon Technologies IC DRIVER HIGH/LOW DRIVER 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V 150ns, 50ns
IR21094PBF
RFQ
VIEW
RFQ
1,915
In-stock
Infineon Technologies IC DRIVER HALF-BRIDGE 14-DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Synchronous Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 2.9V 200mA, 350mA 600V 150ns, 50ns