Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
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IRS2118SPBF
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RFQ
3,643
In-stock
Infineon Technologies IC DRIVER MOSFET/IGBT 1CH 8-SOIC - Active Tube Inverting -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 10 V ~ 20 V Single High-Side 1 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V 75ns, 35ns
IRS2118PBF
RFQ
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RFQ
1,261
In-stock
Infineon Technologies IC DRIVER MOSFET/IGBT 1CH 8-DIP - Active Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 10 V ~ 20 V Single High-Side 1 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V 75ns, 35ns
IRS2117SPBF
RFQ
VIEW
RFQ
889
In-stock
Infineon Technologies IC DRIVER MOSFET/IGBT 1CH 8-SOIC - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 10 V ~ 20 V Single High-Side 1 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V 75ns, 35ns
IRS2117PBF
RFQ
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RFQ
3,972
In-stock
Infineon Technologies IC DRIVER MOSFET/IGBT 1CH 8-DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 10 V ~ 20 V Single High-Side 1 IGBT, N-Channel MOSFET 6V, 9.5V 290mA, 600mA 600V 75ns, 35ns
IRS21171SPBF
RFQ
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RFQ
657
In-stock
Infineon Technologies IC DVR HIGH SIDE 600V 8-SOIC - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 10 V ~ 20 V Single High-Side 1 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V 75ns, 35ns