Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) Rise / Fall Time (Typ)
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IR4428
RFQ
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RFQ
3,724
In-stock
Infineon Technologies IC DRIVER DUAL LOW SIDE 8-DIP - Obsolete Tube Inverting, Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 6 V ~ 20 V Independent Low-Side 2 IGBT, N-Channel MOSFET 0.8V, 2.7V 2.3A, 3.3A 15ns, 10ns
IR4427
RFQ
VIEW
RFQ
652
In-stock
Infineon Technologies IC DRIVER DUAL LOW SIDE 8-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 6 V ~ 20 V Independent Low-Side 2 IGBT, N-Channel MOSFET 0.8V, 2.7V 2.3A, 3.3A 15ns, 10ns
IR4426
RFQ
VIEW
RFQ
2,737
In-stock
Infineon Technologies IC DRIVER DUAL LOW SIDE 8-DIP - Obsolete Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 6 V ~ 20 V Independent Low-Side 2 IGBT, N-Channel MOSFET 0.8V, 2.7V 2.3A, 3.3A 15ns, 10ns
IR4427PBF
RFQ
VIEW
RFQ
2,887
In-stock
Infineon Technologies IC DRIVER DUAL LOW SIDE 8DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 6 V ~ 20 V Independent Low-Side 2 IGBT, N-Channel MOSFET 0.8V, 2.7V 2.3A, 3.3A 15ns, 10ns
IRS4427PBF
RFQ
VIEW
RFQ
2,062
In-stock
Infineon Technologies IC MOSFET DRIVER - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 6 V ~ 20 V Independent Low-Side 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 2.3A, 3.3A 25ns, 25ns
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RFQ
VIEW
RFQ
3,334
In-stock
Infineon Technologies IC DUAL MOSFET IGBT 8-DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 6 V ~ 20 V Independent Low-Side 2 IGBT, N-Channel MOSFET 0.8V, 2.7V 2.3A, 3.3A 15ns, 10ns
IR4426PBF
RFQ
VIEW
RFQ
761
In-stock
Infineon Technologies IC DRIVER DUAL LOW SIDE 8-DIP - Active Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 6 V ~ 20 V Independent Low-Side 2 IGBT, N-Channel MOSFET 0.8V, 2.7V 2.3A, 3.3A 15ns, 10ns