Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
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BS2100F-E2
RFQ
VIEW
RFQ
2,416
In-stock
Rohm Semiconductor IC DVR IGBT/MOSFET - Not For New Designs Digi-Reel® Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP 10 V ~ 18 V Independent Half-Bridge 2 N-Channel MOSFET 1V, 2.6V 60mA, 130mA 600V 200ns, 100ns
BS2100F-E2
RFQ
VIEW
RFQ
3,458
In-stock
Rohm Semiconductor IC DVR IGBT/MOSFET - Not For New Designs Cut Tape (CT) Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP 10 V ~ 18 V Independent Half-Bridge 2 N-Channel MOSFET 1V, 2.6V 60mA, 130mA 600V 200ns, 100ns
BS2100F-E2
RFQ
VIEW
RFQ
2,277
In-stock
Rohm Semiconductor IC DVR IGBT/MOSFET - Not For New Designs Tape & Reel (TR) Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP 10 V ~ 18 V Independent Half-Bridge 2 N-Channel MOSFET 1V, 2.6V 60mA, 130mA 600V 200ns, 100ns
BS2103F-E2
RFQ
VIEW
RFQ
1,881
In-stock
Rohm Semiconductor IC GATE DRVR HALF-BRIDGE 8SOP - Active Digi-Reel® Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP 10 V ~ 18 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 1V, 2.6V 60mA, 130mA 600V 200ns, 100ns
BS2103F-E2
RFQ
VIEW
RFQ
3,117
In-stock
Rohm Semiconductor IC GATE DRVR HALF-BRIDGE 8SOP - Active Cut Tape (CT) Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP 10 V ~ 18 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 1V, 2.6V 60mA, 130mA 600V 200ns, 100ns
BS2103F-E2
RFQ
VIEW
RFQ
967
In-stock
Rohm Semiconductor IC GATE DRVR HALF-BRIDGE 8SOP - Active Tape & Reel (TR) Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP 10 V ~ 18 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 1V, 2.6V 60mA, 130mA 600V 200ns, 100ns