Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) Rise / Fall Time (Typ)
GLOBAL STOCKS
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RFQ
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RFQ
908
In-stock
Infineon Technologies IC GATE DRIVER 24V 6A 8SOIC - Active Tape & Reel (TR) Non-Inverting -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC 5 V ~ 20 V Independent Low-Side 2 N-Channel MOSFET 0.8V, 2.5V 6A, 6A 33ns, 33ns (Max)
IX4340NE
RFQ
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RFQ
1,685
In-stock
IXYS Integrated Circuits Division 5-AMP DUAL LOW-SIDE MOSFET DRIVE - Active Tube Non-Inverting -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC 5 V ~ 20 V Independent Low-Side 2 N-Channel, P-Channel MOSFET 0.8V, 2.5V 5A, 5A 7ns, 7ns
IX4340NETR
RFQ
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RFQ
2,851
In-stock
IXYS Integrated Circuits Division 5-AMP DUAL LOW-SIDE MOSFET DRIVE - Obsolete Tape & Reel (TR) Non-Inverting -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC 5 V ~ 20 V Independent Low-Side 2 N-Channel, P-Channel MOSFET 0.8V, 2.5V 5A, 5A 7ns, 7ns
IXDD504SIAT/R
RFQ
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RFQ
1,936
In-stock
IXYS IC GATE DRIVER 4A 8-SOIC - Obsolete Tape & Reel (TR) Non-Inverting -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC 4.5 V ~ 30 V Independent Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 4A, 4A 9ns, 8ns
MIC4123YME
RFQ
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RFQ
1,169
In-stock
Microchip Technology IC MOSFET DRVR DUAL INVERT 8SOIC - Active Tube Inverting -40°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC 4.5 V ~ 20 V Independent Low-Side 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 3A, 3A 11ns, 11ns
MIC4123YME-TR
RFQ
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RFQ
1,495
In-stock
Microchip Technology IC DRIVER MOSFET 3A DUAL 8-SOIC - Active Tape & Reel (TR) Inverting -40°C ~ 125°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC 4.5 V ~ 20 V Independent Low-Side 2 N-Channel, P-Channel MOSFET 0.8V, 2.4V 3A, 3A 11ns, 11ns