- Manufacture :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,590
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 1.02A SOT563F | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | - | 240mW (Tc) | N-Channel | - | 30V | 1.02A (Tc) | 142 mOhm @ 1A, 10V | 1.5V @ 250µA | 3nC @ 4.5V | 110pF @ 15V | 2.5V, 10V | ±12V | |||
|
VIEW |
3,324
In-stock
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Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 540mW (Ta) | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | |||
