Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIE820DF-T1-E3
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770
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Vishay Siliconix MOSFET N-CH 20V 50A 10-POLARPAK TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (S) 10-PolarPAK® (S) 5.2W (Ta), 104W (Tc) N-Channel - 20V 50A (Tc) 3.5 mOhm @ 18A, 4.5V 2V @ 250µA 143nC @ 10V 4300pF @ 10V 2.5V, 4.5V ±12V
SIE820DF-T1-GE3
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RFQ
3,191
In-stock
Vishay Siliconix MOSFET N-CH 20V 50A POLARPAK TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (S) 10-PolarPAK® (S) 5.2W (Ta), 104W (Tc) N-Channel - 20V 50A (Tc) 3.5 mOhm @ 18A, 4.5V 2V @ 250µA 143nC @ 10V 4300pF @ 10V 2.5V, 4.5V ±12V
TPN4R712MD,L1Q
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2,536
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 36A 8TSON ADV U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 42W (Tc) P-Channel - 20V 36A (Tc) 4.7 mOhm @ 18A, 4.5V 1.2V @ 1mA 65nC @ 5V 4300pF @ 10V 2.5V, 4.5V ±12V