Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD65R250C6XTMA1
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2,167
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Infineon Technologies MOSFET N-CH 650V 16.1A TO-252 CoolMOS™ Last Time Buy Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 208.3W (Tc) N-Channel - 650V 16.1A (Tc) 250 mOhm @ 4.4A, 10V 3.5V @ 400µA 44nC @ 10V 950pF @ 100V 10V ±20V
IPB60R280C6ATMA1
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828
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Infineon Technologies MOSFET N-CH 600V 13.8A TO263 CoolMOS™ Not For New Designs Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 104W (Tc) N-Channel - 600V 13.8A (Tc) 280 mOhm @ 6.5A, 10V 3.5V @ 430µA 43nC @ 10V 950pF @ 100V 10V ±20V
IPB65R280C6ATMA1
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1,705
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Infineon Technologies MOSFET N-CH 650V 13.8A TO263 CoolMOS™ Last Time Buy Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 104W (Tc) N-Channel - 650V 13.8A (Tc) 280 mOhm @ 4.4A, 10V 3.5V @ 440µA 45nC @ 10V 950pF @ 100V 10V ±20V
EPC2034
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1,444
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EPC TRANS GAN 200V 48A BUMPED DIE eGaN® Active Digi-Reel® GaNFET (Gallium Nitride) -40°C ~ 140°C (TJ) Surface Mount Die Die - N-Channel - 200V 48A (Ta) 10 mOhm @ 20A, 5V 2.5V @ 7mA 8.8nC @ 5V 950pF @ 100V 5V +6V, -4V