- Part Status :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,893
In-stock
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STMicroelectronics | MOSFET N-CH 30V 48A DPAK | STripFET™ V | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 60W (Tc) | N-Channel | - | 30V | 48A (Tc) | 8 mOhm @ 24A, 10V | 3V @ 250µA | 8.8nC @ 5V | 1350pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
1,427
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 11.5A LFPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1210, 8-LFPAK33 (5-Lead) | LFPAK33 | 44W (Tc) | N-Channel | - | 100V | 11.5A (Tc) | 119 mOhm @ 5A, 10V | 2.05V @ 1mA | 8.8nC @ 5V | 882pF @ 25V | 5V | ±10V | |||
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VIEW |
3,857
In-stock
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Central Semiconductor Corp | MOSFET N-CH 60V 5.3A SOT-89 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 | 1.2W (Ta) | N-Channel | - | 60V | 5.3A (Ta) | 41 mOhm @ 5.3A, 10V | 3V @ 250µA | 8.8nC @ 5V | 920pF @ 30V | 4.5V, 10V | 20V | |||
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VIEW |
3,023
In-stock
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Rohm Semiconductor | MOSFET N-CH 45V 4A TSMT6 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) | 600mW (Ta) | N-Channel | - | 45V | 4A (Ta) | 53 mOhm @ 4A, 10V | 2.5V @ 1mA | 8.8nC @ 5V | 530pF @ 10V | 4V, 10V | 21V | |||
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VIEW |
1,444
In-stock
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EPC | TRANS GAN 200V 48A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 140°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 48A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | 950pF @ 100V | 5V | +6V, -4V |