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- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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827
In-stock
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Infineon Technologies | MOSFET P-CH 60V 18.6A TO-252 | SIPMOS® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 80W (Tc) | P-Channel | - | 60V | 18.6A (Tc) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
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VIEW |
3,767
In-stock
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Infineon Technologies | MOSFET P-CH 60V 18.6A TO252-3 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 80W (Tc) | P-Channel | - | 60V | 18.6A (Tc) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
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VIEW |
3,345
In-stock
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Infineon Technologies | MOSFET N-CH 75V 27A TO252-3 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 75W (Tc) | N-Channel | - | 75V | 27A (Tc) | 50 mOhm @ 50A, 10V | 2V @ 31µA | 33nC @ 10V | 630pF @ 25V | 5V, 10V | ±20V |