Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PMV37EN,215
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RFQ
1,741
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NXP USA Inc. MOSFET N-CH 30V 3.1A SOT-23 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 380mW (Ta) N-Channel - 30V 3.1A (Ta) 36 mOhm @ 3.1A, 10V 2.5V @ 250µA 10nC @ 10V 330pF @ 10V 4.5V, 10V ±20V
PMT200EN,135
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RFQ
1,976
In-stock
NXP USA Inc. MOSFET N-CH 100V 1.8A SC-73 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 800mW (Ta), 8.3W (Tc) N-Channel - 100V 1.8A (Ta) 235 mOhm @ 1.5A, 10V 2.5V @ 250µA 10nC @ 10V 475pF @ 80V 4.5V, 10V ±20V
PMV50ENEAR
RFQ
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RFQ
3,876
In-stock
Nexperia USA Inc. MOSFET N-CH 30V TO-236AB Automotive, AEC-Q101 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 510mW (Ta), 3.9W (Tc) N-Channel - 30V 3.9A (Ta) 43 mOhm @ 3.9A, 10V 2.5V @ 250µA 10nC @ 10V 276pF @ 15V 4.5V, 10V ±20V
SI2366DS-T1-GE3
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RFQ
3,845
In-stock
Vishay Siliconix MOSFET N-CH 30V 5.8A SOT-23 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 - 1.25W (Ta), 2.1W (Tc) N-Channel - 30V 5.8A (Tc) 36 mOhm @ 4.5A, 10V 2.5V @ 250µA 10nC @ 10V 335pF @ 15V 10V ±20V
SQ3456BEV-T1_GE3
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RFQ
2,749
In-stock
Vishay Siliconix MOSFET N-CH 30V 7.8A 6TSOP TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 4W (Tc) N-Channel - 30V 7.8A (Tc) 35 mOhm @ 6A, 10V 2.5V @ 250µA 10nC @ 10V 370pF @ 15V 4.5V, 10V ±20V