Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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EPC2015
RFQ
VIEW
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966
In-stock
EPC TRANS GAN 40V 33A BUMPED DIE eGaN® Discontinued at Digi-Key Digi-Reel® GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (11-Solder Bar) - N-Channel - 40V 33A (Ta) 4 mOhm @ 33A, 5V 2.5V @ 9mA 11.6nC @ 5V 1200pF @ 20V 5V +6V, -5V
RJ1U330AAFRGTL
RFQ
VIEW
RFQ
3,764
In-stock
Rohm Semiconductor NCH 250V/33A POWER MOSFET Automotive, AEC-Q101 Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-83 LPTS 211W (Tc) N-Channel - 250V 33A (Ta) 105 mOhm @ 16.5A, 10V 5V @ 1mA 80nC @ 10V 4500pF @ 25V 10V ±30V
TPH2900ENH,L1Q
RFQ
VIEW
RFQ
1,235
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 200V 33A SOP8 U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) N-Channel - 200V 33A (Ta) 29 mOhm @ 16.5A, 10V 4V @ 1mA 22nC @ 10V 2200pF @ 100V 10V ±20V
TK33S10N1Z,LQ
RFQ
VIEW
RFQ
2,404
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 33A DPAK U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 125W (Tc) N-Channel - 100V 33A (Ta) 9.7 mOhm @ 16.5A, 10V 4V @ 500µA 28nC @ 10V 2050pF @ 10V 10V ±20V