Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N CH 60V 32A 8-SOP ADV U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 63W (Tc) N-Channel - 60V 32A (Ta) 4.6 mOhm @ 16A, 10V 4V @ 500µA 49nC @ 10V 3965pF @ 30V 6.5V, 10V ±20V
TPH11003NL,LQ
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Toshiba Semiconductor and Storage MOSFET N CH 30V 32A 8SOP U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 21W (Tc) N-Channel - 30V 32A (Ta) 11 mOhm @ 5.5A, 10V 2.3V @ 100µA 7.5nC @ 10V 660pF @ 15V 4.5V, 10V ±20V