Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI7112DN-T1-GE3
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3,715
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Vishay Siliconix MOSFET N-CH 30V 11.3A 1212-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) N-Channel - 30V 11.3A (Tc) 7.5 mOhm @ 17.8A, 10V 1.5V @ 250µA 27nC @ 4.5V 2610pF @ 15V 4.5V, 10V ±12V
IPL60R360P6SATMA1
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3,448
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Infineon Technologies MOSFET N-CH 600V 8THINPAK CoolMOS™ P6 Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-ThinPak (5x6) 89.3W (Tc) N-Channel - 600V 11.3A (Tc) 360 mOhm @ 4.5A, 10V 4.5V @ 370µA 22nC @ 10V 1010pF @ 100V 10V ±20V
SI7112DN-T1-E3
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2,990
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Vishay Siliconix MOSFET N-CH 30V 11.3A 1212-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) N-Channel - 30V 11.3A (Tc) 7.5 mOhm @ 17.8A, 10V 1.5V @ 250µA 27nC @ 4.5V 2610pF @ 15V 4.5V, 10V ±12V
SIA416DJ-T1-GE3
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3,650
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Vishay Siliconix MOSFET N-CH 100V 11.3A SC70-6L TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 PowerPAK® SC-70-6 Single 3.5W (Ta), 19W (Tc) N-Channel - 100V 11.3A (Tc) 83 mOhm @ 3.2A, 10V 3V @ 250µA 10nC @ 10V 295pF @ 50V 4.5V, 10V ±20V
BSZ12DN20NS3GATMA1
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RFQ
2,163
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Infineon Technologies MOSFET N-CH 200V 11.3A 8TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 50W (Tc) N-Channel - 200V 11.3A (Tc) 125 mOhm @ 5.7A, 10V 4V @ 25µA 8.7nC @ 10V 680pF @ 100V 10V ±20V
BSC12DN20NS3GATMA1
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RFQ
954
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Infineon Technologies MOSFET N-CH 200V 11.3A 8TDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 50W (Tc) N-Channel - 200V 11.3A (Tc) 125 mOhm @ 5.7A, 10V 4V @ 25µA 8.7nC @ 10V 680pF @ 100V 10V ±20V