Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STMicroelectronics MOSFET N-CH 600V 29A D2PAK FDmesh™ II Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 190W (Tc) N-Channel - 600V 29A (Tc) 110 mOhm @ 14.5A, 10V 5V @ 250µA 80.4nC @ 10V 2785pF @ 50V 10V ±25V
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STMicroelectronics MOSFET N-CH 600V 29A D2PAK FDmesh™ II Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 190W (Tc) N-Channel - 600V 29A (Tc) 110 mOhm @ 14.5A, 10V 5V @ 250µA 80.4nC @ 10V 2785pF @ 50V 10V ±25V
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STMicroelectronics MOSFET N-CH 600V 29A D2PAK MDmesh™ II Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 210W (Tc) N-Channel - 600V 29A (Tc) 105 mOhm @ 14.5A, 10V 4V @ 250µA 83.6nC @ 10V 2722pF @ 100V 10V ±25V
STB34NM60N
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STMicroelectronics MOSFET N-CH 600V 29A D2PAK MDmesh™ II Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 250W (Tc) N-Channel - 600V 29A (Tc) 105 mOhm @ 14.5A, 10V 4V @ 250µA 84nC @ 10V 2722pF @ 100V 10V ±25V
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Infineon Technologies MOSFET N-CH 55V 29A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 68W (Tc) N-Channel - 55V 29A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V