Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMN3067LW-13
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2,417
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Diodes Incorporated MOSFET N-CH 30V 2.6A SOT-323 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-70, SOT-323 SOT-323 500mW (Ta) N-Channel - 30V 2.6A (Ta) 67 mOhm @ 2.5A, 4.5V 1.5V @ 250µA 4.6nC @ 4.5V 447pF @ 10V 2.5V, 4.5V ±12V
SSM6J213FE(TE85L,F
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1,855
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Toshiba Semiconductor and Storage MOSFET P CH 20V 2.6A ES6 U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 500mW (Ta) P-Channel - 20V 2.6A (Ta) 103 mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7nC @ 4.5V 290pF @ 10V 1.5V, 4.5V ±8V
DMN3067LW-7
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RFQ
3,639
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Diodes Incorporated MOSFET N-CH 30V 2.6A SOT-323 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-70, SOT-323 SOT-323 500mW (Ta) N-Channel - 30V 2.6A (Ta) 67 mOhm @ 2.5A, 4.5V 1.5V @ 250µA 4.6nC @ 4.5V 447pF @ 10V 2.5V, 4.5V ±12V
FDN306P
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3,760
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ON Semiconductor MOSFET P-CH 12V 2.6A SSOT3 PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SuperSOT-3 500mW (Ta) P-Channel - 12V 2.6A (Ta) 40 mOhm @ 2.6A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 1138pF @ 6V 1.8V, 4.5V ±8V