Supplier Device Package :
Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SSM6J414TU,LF
RFQ
VIEW
RFQ
1,149
In-stock
Toshiba Semiconductor and Storage MOSFET P CH 20V 6A UF6 U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads UF6 1W (Ta) P-Channel 20V 6A (Ta) 22.5 mOhm @ 6A, 4.5V 1V @ 1mA 23.1nC @ 4.5V 1650pF @ 10V 1.5V, 4.5V ±8V
DMP2035UVT-7
RFQ
VIEW
RFQ
1,209
In-stock
Diodes Incorporated MOSFET P-CH 20V 6A TSOT26 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSOT-26 1.2W (Ta) P-Channel 20V 6A (Ta) 35 mOhm @ 4A, 4.5V 1.5V @ 250µA 23.1nC @ 4.5V 2400pF @ 10V 1.8V, 4.5V ±12V