Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PMT200EN,135
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1,976
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NXP USA Inc. MOSFET N-CH 100V 1.8A SC-73 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 800mW (Ta), 8.3W (Tc) N-Channel 100V 1.8A (Ta) 235 mOhm @ 1.5A, 10V 2.5V @ 250µA 10nC @ 10V 475pF @ 80V 4.5V, 10V ±20V
BSP373NH6327XTSA1
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RFQ
1,792
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.8A (Ta) 240 mOhm @ 1.8A, 10V 4V @ 218µA 9.3nC @ 10V 265pF @ 25V 10V ±20V
BSP372NH6327XTSA1
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RFQ
1,430
In-stock
Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 100V 1.8A (Ta) 230 mOhm @ 1.8A, 10V 1.8V @ 218µA 14.3nC @ 10V 329pF @ 25V 4.5V, 10V ±20V
SI3430DV-T1-E3
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RFQ
3,474
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Vishay Siliconix MOSFET N-CH 100V 1.8A 6-TSOP - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.14W (Ta) N-Channel 100V 1.8A (Ta) 170 mOhm @ 2.4A, 10V 2V @ 250µA (Min) 6.6nC @ 10V - 6V, 10V ±20V
SI3430DV-T1-GE3
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RFQ
1,247
In-stock
Vishay Siliconix MOSFET N-CH 100V 1.8A 6-TSOP - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.14W (Ta) N-Channel 100V 1.8A (Ta) 170 mOhm @ 2.4A, 10V 2V @ 250µA (Min) 6.6nC @ 10V - 6V, 10V ±20V