Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI4490DY-T1-E3
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3,373
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Vishay Siliconix MOSFET N-CH 200V 2.85A 8-SOIC TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.56W (Ta) N-Channel 200V 2.85A (Ta) 80 mOhm @ 4A, 10V 2V @ 250µA (Min) 42nC @ 10V - 6V, 10V ±20V
SI7450DP-T1-E3
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2,841
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Vishay Siliconix MOSFET N-CH 200V 3.2A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) N-Channel 200V 3.2A (Ta) 80 mOhm @ 4A, 10V 4.5V @ 250µA 42nC @ 10V - 6V, 10V ±20V
FDMS2672
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2,837
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ON Semiconductor MOSFET N-CH 200V 3.7A POWER56 UltraFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (5x6), Power56 2.5W (Ta), 78W (Tc) N-Channel 200V 3.7A (Ta), 20A (Tc) 77 mOhm @ 3.7A, 10V 4V @ 250µA 42nC @ 10V 2315pF @ 100V 6V, 10V ±20V
SI7450DP-T1-GE3
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1,329
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Vishay Siliconix MOSFET N-CH 200V 3.2A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) N-Channel 200V 3.2A (Ta) 80 mOhm @ 4A, 10V 4.5V @ 250µA 42nC @ 10V - 6V, 10V ±20V
SI4490DY-T1-GE3
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RFQ
1,085
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Vishay Siliconix MOSFET N-CH 200V 2.85A 8-SOIC TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.56W (Ta) N-Channel 200V 2.85A (Ta) 80 mOhm @ 4A, 10V 2V @ 250µA (Min) 42nC @ 10V - 6V, 10V ±20V