Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 650V 13.7A D2PAK DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 130W (Tc) N-Channel - 650V 13.7A (Ta) 250 mOhm @ 6.9A, 10V 3.5V @ 690µA 35nC @ 10V 1300pF @ 300V 10V ±30V
IPL65R130C7AUMA1
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Infineon Technologies MOSFET N-CH 650V 15A 4VSON CoolMOS™ C7 Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 4-PowerTSFN PG-VSON-4 102W (Tc) N-Channel - 650V 15A (Tc) 130 mOhm @ 4.4A, 10V 4V @ 440µA 35nC @ 10V 1670pF @ 400V 10V ±20V
STB28N65M2
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STMicroelectronics MOSFET N-CH 650V 20A D2PAK MDmesh™ M2 Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 170W (Tc) N-Channel - 650V 20A (Tc) 180 mOhm @ 10A, 10V 4V @ 250µA 35nC @ 10V 1440pF @ 100V 10V ±25V
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Infineon Technologies HIGH POWER_NEW CoolMOS™ C7 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8-2 156W (Tc) N-Channel - 650V 24A (Tc) 105 mOhm @ 8.9A, 10V 4V @ 440µA 35nC @ 10V 1670pF @ 400V 10V ±20V