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- Operating Temperature :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,020
In-stock
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Infineon Technologies | MOSFET N-CH 650V 19A VSON-4 | CoolMOS™ P7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 81W (Tc) | N-Channel | - | 650V | 19A (Tc) | 185 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | |||
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VIEW |
1,182
In-stock
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Infineon Technologies | MOSFET N-CH 650V 19A TO263-3 | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 92W (Tc) | N-Channel | - | 650V | 19A (Tc) | 120 mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | 1500pF @ 400V | 10V | ±20V | |||
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VIEW |
3,458
In-stock
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STMicroelectronics | MOSFET N-CH 650V 19A D2PAK | MDmesh™ II | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | - | 650V | 19A (Tc) | 190 mOhm @ 9.5A, 10V | 4V @ 250µA | 70nC @ 10V | 2500pF @ 50V | 10V | ±25V | |||
