- Manufacture :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,128
In-stock
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Infineon Technologies | MOSFET N-CH 650V 129A PGVSON-4 | CoolMOS™ CFD7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 189W (Tc) | N-Channel | - | 650V | 33A (Tc) | 75 mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67nC @ 10V | 2721pF @ 400V | 10V | ±20V | |||
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VIEW |
3,702
In-stock
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STMicroelectronics | MOSFET N-CH 650V 33A D2PAK | MDmesh™ V | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 190W (Tc) | N-Channel | - | 650V | 33A (Tc) | 79 mOhm @ 16.5A, 10V | 5V @ 250µA | 100nC @ 10V | 4650pF @ 100V | 10V | ±25V | |||
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VIEW |
1,015
In-stock
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Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ P7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 137W (Tc) | N-Channel | - | 650V | 33A (Tc) | 105 mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | 1952pF @ 400V | 10V | ±20V | |||
