Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STB20N65M5
RFQ
VIEW
RFQ
2,568
In-stock
STMicroelectronics MOSFET N-CH 650V 18A D2PAK MDmesh™ V Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 130W (Tc) N-Channel - 650V 18A (Tc) 190 mOhm @ 9A, 10V 5V @ 250µA 36nC @ 10V 1434pF @ 100V 10V ±25V
TK14G65W,RQ
RFQ
VIEW
RFQ
3,267
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 650V 13.7A D2PAK DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 130W (Tc) N-Channel - 650V 13.7A (Ta) 250 mOhm @ 6.9A, 10V 3.5V @ 690µA 35nC @ 10V 1300pF @ 300V 10V ±30V
SIHH11N65EF-T1-GE3
RFQ
VIEW
RFQ
3,889
In-stock
Vishay Siliconix MOSFET N-CHAN 600V 24A POWERPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 130W (Tc) N-Channel - 650V 11A (Tc) 382 mOhm @ 6A, 10V 4V @ 250µA 70nC @ 10V 1243pF @ 100V 10V ±30V
SIHH11N65E-T1-GE3
RFQ
VIEW
RFQ
1,541
In-stock
Vishay Siliconix MOSFET N-CHAN 650V 12A POWERPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 130W (Tc) N-Channel - 650V 12A (Tc) 363 mOhm @ 6A, 10V 4V @ 250µA 68nC @ 10V 1257pF @ 100V 10V ±30V
TK14G65W5,RQ
RFQ
VIEW
RFQ
3,205
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 650V 13.7A DPAK DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 130W (Tc) N-Channel - 650V 13.7A (Ta) 300 mOhm @ 6.9A, 10V 4.5V @ 690µA 40nC @ 10V 1300pF @ 300V 10V ±30V