- Manufacture :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,822
In-stock
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Diodes Incorporated | MOSFET N-CH 12V 1.41A 3DFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | 3-DFN1006 (1.0x0.6) | 500mW (Ta) | N-Channel | - | 12V | 1.41A (Ta) | 150 mOhm @ 1A, 4.5V | 1V @ 250µA | 1.5nC @ 4.5V | 106pF @ 10V | 1.8V, 4.5V | ±6V | |||
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VIEW |
754
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 12V 12A UDFN6B | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | - | 12V | 12A (Ta) | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V | |||
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VIEW |
2,138
In-stock
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Toshiba Semiconductor and Storage | X34 PB-F SMALL LOW ON RESISTANCE | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 12V | 5.4A (Ta) | 17 mOhm @ 5A, 4.5V | 1V @ 1mA | 33nC @ 4.5V | 2700pF @ 10V | 1.2V, 4.5V | ±6V |