Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET N-CHAN 30V POWERPAK 1212- TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S 3.8W (Ta), 52W (Tc) N-Channel - 30V 19A (Ta), 35A (Tc) 6 mOhm @ 19A, 10V 2.2V @ 250µA 42nC @ 10V 1700pF @ 15V 4.5V, 10V ±20V
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Vishay Siliconix MOSFET N-CHAN 30V POWERPAK 1212- TrenchFET® Gen IV Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S 5W (Ta), 65.7W (Tc) N-Channel - 30V 50.5A (Ta), 80A (Tc) 1.2 mOhm @ 15A, 10V 2.2V @ 250µA 93nC @ 10V 4460pF @ 15V 4.5V, 10V +16V, -12V
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Vishay Siliconix MOSFET N-CHAN 25V POWERPAK 1212- TrenchFET® Gen IV Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S 5W (Ta), 65.7W (Tc) N-Channel - 25V 51A (Ta), 80A (Tc) 1.2 mOhm @ 15A, 10V 2.2V @ 250µA 83nC @ 10V 4450pF @ 10V 4.5V, 10V +16V, -12V
SISS64DN-T1-GE3
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Vishay Siliconix MOSFET N-CHANNEL 30V 40A 1212-8S TrenchFET® Gen IV Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S (3.3x3.3) 57W (Tc) N-Channel - 30V 40A (Tc) 2.1 mOhm @ 10A, 10V 2.2V @ 250µA 68nC @ 10V 3420pF @ 15V 4.5V, 10V +20V, -16V
SISS27ADN-T1-GE3
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Vishay Siliconix MOSFET P-CH 30V 50A POWERPAK1212 TrenchFET® Gen III Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S (3.3x3.3) 57W (Tc) P-Channel - 30V 50A (Tc) 5.1 mOhm @ 15A, 10V 2.2V @ 250µA 55nC @ 4.5V 4660pF @ 15V 4.5V, 10V ±20V