Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
CSD18532Q5BT
RFQ
VIEW
RFQ
1,902
In-stock
Texas Instruments MOSFET N-CH 60V 23A 8VSON NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 3.2W (Ta), 156W (Tc) N-Channel - 60V 100A (Ta) 3.2 mOhm @ 25A, 10V 2.2V @ 250µA 58nC @ 10V 5070pF @ 30V 4.5V, 10V ±20V
CSD17551Q5A
RFQ
VIEW
RFQ
2,691
In-stock
Texas Instruments MOSFET N-CH 30V 8SON NexFET™ Not For New Designs Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 3W (Ta) N-Channel - 30V 48A (Tc) 8.8 mOhm @ 11A, 10V 2.2V @ 250µA 7.2nC @ 4.5V 1272pF @ 15V 4.5V, 10V ±20V
CSD18532Q5B
RFQ
VIEW
RFQ
3,654
In-stock
Texas Instruments MOSFET N-CH 60V 23A 8VSON NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 3.2W (Ta), 156W (Tc) N-Channel - 60V 100A (Ta) 3.2 mOhm @ 25A, 10V 2.2V @ 250µA 58nC @ 10V 5070pF @ 30V 4.5V, 10V ±20V