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- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,472
In-stock
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ON Semiconductor | MOSFET N-CH 50V 5.8A 8-SOIC | UltraFET™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 50V | 5.8A (Ta) | 24 mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 1025pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,489
In-stock
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Infineon Technologies | MOSFET P-CH 30V 6.7A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,252
In-stock
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Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V |