Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PSMN9R0-30YL,115
RFQ
VIEW
RFQ
601
In-stock
NXP USA Inc. MOSFET N-CH 30V 61A LFPAK - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 46W (Tc) N-Channel 30V 61A (Tc) 8 mOhm @ 15A, 10V 2.15V @ 1mA 17.8nC @ 10V 1006pF @ 12V 4.5V, 10V ±20V
RJK0305DPB-02#J0
RFQ
VIEW
RFQ
911
In-stock
Renesas Electronics America MOSFET N-CH 30V 30A LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) - Surface Mount SC-100, SOT-669 LFPAK - N-Channel 30V 30A (Ta) 8 mOhm @ 15A, 10V - 8nC @ 4.5V 1250pF @ 10V - -
PSMN8R5-60YS,115
RFQ
VIEW
RFQ
3,085
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 76A LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 106W (Tc) N-Channel 60V 76A (Tc) 8 mOhm @ 15A, 10V 4V @ 1mA 39nC @ 10V 2370pF @ 30V 10V ±20V