Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRL80HS120
RFQ
VIEW
RFQ
2,051
In-stock
Infineon Technologies MOSFET N-CH 80V 12.5A 6PQFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel 80V 12.5A (Tc) 32 mOhm @ 7.5A, 10V 2V @ 10µA 7nC @ 4.5V 540pF @ 25V 4.5V, 10V ±20V
TSM301K12CQ RFG
RFQ
VIEW
RFQ
2,087
In-stock
Taiwan Semiconductor Corporation MOSFET P-CH 20V 4.5A 6-TDFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-TDFN (2x2) 6.5W (Tc) P-Channel 20V 4.5A (Ta) 94 mOhm @ 2.8A, 4.5V 500mV @ 250µA 4.5nC @ 4.5V 5.2pF @ 6V 1.8V, 4.5V ±12V
Default Photo
RFQ
VIEW
RFQ
2,660
In-stock
Infineon Technologies MOSFET N-CH 100V 6PQFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel 100V 11A (Tc) 42 mOhm @ 6.7A, 10V 2.3V @ 10µA 5.6nC @ 4.5V 440pF @ 50V 4.5V, 10V ±20V
IRL60HS118
RFQ
VIEW
RFQ
3,549
In-stock
Infineon Technologies MOSFET N-CH 60V 18.5A 6PQFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel 60V 18.5A (Tc) 17 mOhm @ 11A, 10V 2.3V @ 10µA 8nC @ 4.5V 660pF @ 25V 4.5V, 10V ±20V