- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
2,978
In-stock
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EPC | TRANS GAN 100V 11A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 100V | 11A (Ta) | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 5.2nC @ 5V | 520pF @ 50V | 5V | +6V, -5V | |||
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VIEW |
2,656
In-stock
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EPC | TRANS GAN 200V 3A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 200V | 3A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | 145pF @ 100V | 5V | +6V, -5V | |||
|
VIEW |
1,839
In-stock
|
EPC | TRANS GAN 200V 12A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 200V | 12A (Ta) | 25 mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | 540pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
2,028
In-stock
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EPC | TRANS GAN 150V 12A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 150V | 12A (Ta) | 25 mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | 540pF @ 100V | 5V | +6V, -5V | |||
|
VIEW |
2,175
In-stock
|
EPC | TRANS GAN 100V 25A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | N-Channel | - | 100V | 25A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | 950pF @ 50V | 5V | +6V, -5V |