- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,041
In-stock
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Infineon Technologies | MOSFET N-CH 30V 64A D2PAK | FETKY™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 89W (Tc) | N-Channel | - | 30V | 64A (Tc) | 14 mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
3,685
In-stock
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NXP USA Inc. | MOSFET N-CH 100V 64A D2PAK | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 64A (Tc) | 19 mOhm @ 25A, 10V | 4V @ 1mA | 53nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,103
In-stock
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Infineon Technologies | MOSFET N-CH 55V 64A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 130W (Tc) | N-Channel | - | 55V | 64A (Tc) | 14 mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | 10V | ±20V | |||
