Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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C3M0280090J-TR
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2,821
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Cree/Wolfspeed MOSFET N-CH 900V 11A C3M™ Active Digi-Reel® SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 50W (Tc) N-Channel - 900V 11A (Tc) 360 mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5nC @ 15V 150pF @ 600V 15V +18V, -8V
IRFS7434TRL7PP
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2,087
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Infineon Technologies MOSFET N-CH 40V 240A D2PAK-7 HEXFET®, StrongIRFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) D2PAK-7 245W (Tc) N-Channel - 40V 240A (Tc) 1 mOhm @ 100A, 10V 3.9V @ 250µA 315nC @ 10V 10250pF @ 25V 6V, 10V ±20V
C3M0120090J-TR
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2,040
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Cree/Wolfspeed MOSFET N-CH 900V 22A C3M™ Active Digi-Reel® SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 83W (Tc) N-Channel - 900V 22A (Tc) 155 mOhm @ 15A, 15V 3.5V @ 3mA 17.3nC @ 15V 350pF @ 600V 15V +18V, -8V
IRFS4321TRL7PP
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1,406
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Infineon Technologies MOSFET N-CH 150V 86A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) D2PAK-7 350W (Tc) N-Channel - 150V 86A (Tc) 14.7 mOhm @ 34A, 10V 5V @ 250µA 110nC @ 10V 4460pF @ 50V 10V ±30V
IRF135SA204
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1,295
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Infineon Technologies MOSFET N-CH 135V 160A HEXFET®, StrongIRFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) Variant D2PAK-7 500W (Tc) N-Channel - 135V 160A (Tc) 5.9 mOhm @ 96A, 10V 4V @ 250µA 315nC @ 10V 11690pF @ 50V 10V ±20V