- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 103 mOhm @ 1.5A, 4.5V (2)
- 15.3 mOhm @ 4A, 4.5V (1)
- 150 mOhm @ 1A, 4.5V (1)
- 22.5 mOhm @ 6A, 4.5V (1)
- 23.1 mOhm @ 4A, 4.5V (1)
- 25.8 mOhm @ 4A, 4.5V (1)
- 29.8 mOhm @ 3A, 4.5V (2)
- 32 mOhm @ 3.5A, 4.5V (1)
- 32.4 mOhm @ 3A, 4.5V (1)
- 33 mOhm @ 4A, 4.5V (1)
- 390 mOhm @ 800mA, 4.5V (2)
- 40.7 mOhm @ 3A, 4.5V (1)
- 55 mOhm @ 3A, 4.5V (1)
- 59 mOhm @ 3A, 4.5V (1)
- 93 mOhm @ 1.5A, 4.5V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
18 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,149
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 2.6A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 2.6A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,829
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A UF6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 22.5 mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1nC @ 4.5V | 1650pF @ 10V | 1.5V, 4.5V | ±8V | |||
.jpg)
|
VIEW |
3,883
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
1,269
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
1,462
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 0.8A VESM | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | P-Channel | - | 20V | 800mA (Ta) | 390 mOhm @ 800mA, 4.5V | - | - | 100pF @ 10V | 1.2V, 4.5V | ±8V | |||
|
|
VIEW |
1,287
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 3.4A (Ta) | 59 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,993
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A S-MINI | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 600mW (Ta) | P-Channel | - | 20V | 2A (Ta) | 150 mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
1,627
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 20V 4A SOT23F | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 20V | 4A (Ta) | 33 mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 410pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,147
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CHANNEL 12V 4.8A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | 700mW (Ta) | P-Channel | - | 12V | 4.8A (Ta) | 32 mOhm @ 3.5A, 4.5V | 1V @ 1mA | 12.7nC @ 4.5V | 1040pF @ 12V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
890
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A SOT23F | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 29.8 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
1,184
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.4A UFM | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 4.4A (Ta) | 25.8 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,572
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 40.7 mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1nC @ 4.5V | 970pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
3,662
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 4A SOT-23F | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 4A (Ta) | 55 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,840
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.4A CST3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | P-Channel | - | 20V | 1.4A (Ta) | 390 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1.6nC @ 4.5V | 100pF @ 10V | 1.2V, 4.5V | ±8V | |||
|
|
VIEW |
3,921
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A SOT23F | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 3.9A (Ta) | 93 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
3,133
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 10A UDFN6B | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 10A (Ta) | 15.3 mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9nC @ 4.5V | 2600pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
1,552
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.5A | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 5.5A (Ta) | 29.8 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,117
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
