Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TJ60S06M3L(T6L1,NQ
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1,288
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 60A DPAK-3 U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 100W (Tc) P-Channel - 60V 60A (Ta) 11.2 mOhm @ 30A, 10V 3V @ 1mA 156nC @ 10V 7760pF @ 10V 6V, 10V +10V, -20V
CSD19506KTTT
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2,730
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Texas Instruments IC MOSFET N-CH 80V TO-220 NexFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA DDPAK/TO-263-3 375W (Tc) N-Channel - 80V 200A (Ta) 2.3 mOhm @ 100A, 10V 3.2V @ 250µA 156nC @ 10V 12200pF @ 40V 6V, 10V ±20V
CSD19506KTT
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2,010
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Texas Instruments MOSFET N-CH 80V 200A DDPAK-3 NexFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA DDPAK/TO-263-3 375W (Tc) N-Channel - 80V 200A (Ta) 2.3 mOhm @ 100A, 10V 3.2V @ 250µA 156nC @ 10V 12200pF @ 40V 6V, 10V ±20V
IPT020N10N3ATMA1
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3,425
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Infineon Technologies MOSFET N-CH 100V 300A 8HSOF OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8-1 375W (Tc) N-Channel - 100V 300A (Tc) 2 mOhm @ 150A, 10V 3.5V @ 272µA 156nC @ 10V 11200pF @ 50V 6V, 10V ±20V