- Manufacture :
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- Operating Temperature :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,200
In-stock
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Vishay Siliconix | MOSFET N-CH 150V 18A TO220-3 | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 88W (Tc) | N-Channel | - | 150V | 18A (Tc) | 95 mOhm @ 15A, 10V | 2V @ 250µA (Min) | 25nC @ 10V | 900pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
2,283
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 88W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.5 mOhm @ 32.5A, 10V | 3V @ 1mA | 63nC @ 10V | 2800pF @ 10V | 6V, 10V | ±20V | |||
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VIEW |
933
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 60A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 88W (Tc) | N-Channel | - | 60V | 60A (Ta) | 8 mOhm @ 30A, 10V | 3V @ 1mA | 60nC @ 10V | 2900pF @ 10V | 6V, 10V | ±20V | |||
