- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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12 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,979
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 139W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||||
VIEW |
2,947
In-stock
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Renesas Electronics America | MOSFET N-CH 400V 17A LDPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | 4-LDPAK | 100W (Tc) | N-Channel | - | 400V | 17A (Ta) | 300 mOhm @ 8.5A, 10V | - | 38nC @ 10V | 1450pF @ 25V | 10V | ±30V | ||||
VIEW |
2,722
In-stock
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Renesas Electronics America | MOSFET N-CH 200V W-PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WPAK | 30W (Tc) | N-Channel | - | 200V | 20A (Ta) | 69 mOhm @ 10A, 10V | - | 38nC @ 10V | 2400pF @ 25V | 10V | ±30V | ||||
VIEW |
2,922
In-stock
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Renesas Electronics America | MOSFET N-CH 600V 11A LDPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | 4-LDPAK | 100W (Tc) | N-Channel | - | 600V | 11A (Ta) | 810 mOhm @ 5.5A, 10V | - | 38nC @ 10V | 1400pF @ 25V | 10V | ±30V | ||||
VIEW |
2,148
In-stock
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Renesas Electronics America | MOSFET N-CH 500V 14A LDPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | 4-LDPAK | 100W (Tc) | N-Channel | - | 500V | 14A (Ta) | 465 mOhm @ 7A, 10V | - | 38nC @ 10V | 1450pF @ 25V | 10V | ±30V | ||||
VIEW |
3,166
In-stock
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Renesas Electronics America | MOSFET N-CH 150V W-PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WPAK | 30W (Tc) | N-Channel | - | 150V | 25A (Ta) | 48 mOhm @ 12.5A, 10V | - | 38nC @ 10V | 2400pF @ 25V | 10V | ±30V | ||||
VIEW |
3,834
In-stock
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Renesas Electronics America | MOSFET N-CHANNEL 200V 20A WPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | WPAK(3F) (5x6) | 65W (Ta) | N-Channel | - | 200V | 20A (Ta) | 69 mOhm @ 10A, 10V | - | 38nC @ 10V | 2200pF @ 25V | 10V | ±30V | ||||
VIEW |
3,081
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A SOP8 2-6J1B | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | - | 30V | 18A (Ta) | 4.6 mOhm @ 9A, 10V | 2.3V @ 1mA | 38nC @ 10V | 2265pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
754
In-stock
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STMicroelectronics | MOSFET N-CH 500V 15A D2PAK | MDmesh™ II | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 125W (Tc) | N-Channel | - | 500V | 15A (Tc) | 260 mOhm @ 7.5A, 10V | 4V @ 250µA | 38nC @ 10V | 1200pF @ 50V | 10V | ±25V | ||||
VIEW |
3,920
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A D2PAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||||
VIEW |
3,188
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 28A 8-SOP ADV | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | - | 60V | 28A (Ta) | 5.9 mOhm @ 14A, 10V | 4V @ 300µA | 38nC @ 10V | 3100pF @ 30V | 10V | ±20V | ||||
VIEW |
2,854
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V |