Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD65R225C7ATMA1
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Infineon Technologies MOSFET N-CH 650V 11A TO252-3 CoolMOS™ C7 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 63W (Tc) N-Channel - 650V 11A (Tc) 225 mOhm @ 4.8A, 10V 4V @ 240µA 20nC @ 10V 996pF @ 400V 10V ±20V
IPD80R600P7ATMA1
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2,844
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Infineon Technologies MOSFET N-CH 800V 8A TO252-3 CoolMOS™ P7 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 60W (Tc) N-Channel - 800V 8A (Tc) 600 mOhm @ 3.4A, 10V 3.5V @ 170µA 20nC @ 10V 570pF @ 500V 10V ±20V
IPD65R660CFDAATMA1
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3,284
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Infineon Technologies MOSFET N-CH TO252-3 Automotive, AEC-Q101, CoolMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 62.5W (Tc) N-Channel - 650V 6A (Tc) 660 mOhm @ 3.22A, 10V 4.5V @ 214.55µA 20nC @ 10V 543pF @ 100V 10V ±20V
IPD30N03S4L09ATMA1
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1,371
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Infineon Technologies MOSFET N-CH 30V 30A TO252-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 42W (Tc) N-Channel - 30V 30A (Tc) 9 mOhm @ 30A, 10V 2.2V @ 13µA 20nC @ 10V 1520pF @ 15V 4.5V, 10V ±16V