Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPC8110(TE12L,Q,M)
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Toshiba Semiconductor and Storage MOSFET P-CH 40V 8A SOP8 2-6J1B U-MOSIII Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) P-Channel - 40V 8A (Ta) 25 mOhm @ 4A, 10V 2V @ 1mA 48nC @ 10V 2180pF @ 10V 4V, 10V ±20V