Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SIS778DN-T1-GE3
RFQ
VIEW
RFQ
2,512
In-stock
Vishay Siliconix MOSFET N-CH 30V 35A POWERPAK1212 - Last Time Buy Tape & Reel (TR) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 52W (Tc) N-Channel Schottky Diode (Body) 30V 35A (Tc) 5 mOhm @ 10A, 10V 2.2V @ 250µA 42.5nC @ 10V 1390pF @ 15V 4.5V, 10V ±20V
SI7613DN-T1-GE3
RFQ
VIEW
RFQ
3,797
In-stock
Vishay Siliconix MOSFET P-CH 20V 35A 1212-8 PPAK TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 3.8W (Ta), 52.1W (Tc) P-Channel - 20V 35A (Tc) 8.7 mOhm @ 17A, 10V 2.2V @ 250µA 87nC @ 10V 2620pF @ 10V 4.5V, 10V ±16V
TSM480P06CP ROG
RFQ
VIEW
RFQ
3,542
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 60V 20A TO252 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 66W (Tc) P-Channel - 60V 20A (Tc) 48 mOhm @ 8A, 10V 2.2V @ 250µA 22.4nC @ 10V 1250pF @ 30V 4.5V, 10V ±20V
SISS27DN-T1-GE3
RFQ
VIEW
RFQ
2,325
In-stock
Vishay Siliconix MOSFET P-CH 30V 50A PPAK 1212-8S TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerPAK® 1212-8S (3.3x3.3) 4.8W (Ta), 57W (Tc) P-Channel - 30V 50A (Tc) 5.6 mOhm @ 15A, 10V 2.2V @ 250µA 140nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V