Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AON6458
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 250V 2.2A 8DFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount 8-PowerSMD, Flat Leads 8-DFN (5x6) 2W (Ta), 83W (Tc) N-Channel - 250V 2.2A (Ta), 14A (Tc) 170 mOhm @ 10A, 10V 4.5V @ 250µA 27nC @ 10V 1240pF @ 25V 10V ±30V
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Toshiba Semiconductor and Storage MOSFET N CH 600V 20A 5DFN DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 156W (Tc) N-Channel Super Junction 600V 20A (Ta) 170 mOhm @ 10A, 10V 3.7V @ 1mA 48nC @ 10V 1680pF @ 300V 10V ±30V