Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPB019N08N3GATMA1
RFQ
VIEW
RFQ
1,867
In-stock
Infineon Technologies MOSFET N-CH 80V 180A TO263-7 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 300W (Tc) N-Channel - 80V 180A (Tc) 1.9 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 6V, 10V ±20V
IPB019N06L3GATMA1
RFQ
VIEW
RFQ
3,316
In-stock
Infineon Technologies MOSFET N-CH 60V 120A TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 250W (Tc) N-Channel - 60V 120A (Tc) 1.9 mOhm @ 100A, 10V 2.2V @ 196µA 166nC @ 4.5V 28000pF @ 30V 4.5V, 10V ±20V