- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,248
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 9.7A TO252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 1.68W (Ta) | N-Channel | - | 30V | 9.7A (Ta) | 16 mOhm @ 11.6A, 10V | 1.95V @ 250µA | 18.85nC @ 10V | 867pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,079
In-stock
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Diodes Incorporated | MOSFET N-CHA 80V 9.7A SO8 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | - | 80V | 9.7A (Ta) | 16.5 mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | 1949pF @ 40V | 4.5V, 10V | ±20V |