Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK4512DPE-00#J3
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Renesas Electronics America MOSFET N-CH 450V 14A LDPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-83 4-LDPAK 100W (Tc) N-Channel - 450V 14A (Ta) 510 mOhm @ 7A, 10V - 29nC @ 10V 1100pF @ 25V 10V ±30V
IRF7458TR
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3,134
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Infineon Technologies MOSFET N-CH 30V 14A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 14A (Ta) 8 mOhm @ 14A, 16V 4V @ 250µA 59nC @ 10V 2410pF @ 15V 10V, 16V ±30V
HAT2299WP-EL-E
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2,290
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Renesas Electronics America MOSFET N-CH WPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-WPAK 25W (Tc) N-Channel - 150V 14A (Ta) 110 mOhm @ 7A, 10V - 15nC @ 10V 710pF @ 25V 10V ±30V
RJK5013DPE-00#J3
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2,148
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Renesas Electronics America MOSFET N-CH 500V 14A LDPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-83 4-LDPAK 100W (Tc) N-Channel - 500V 14A (Ta) 465 mOhm @ 7A, 10V - 38nC @ 10V 1450pF @ 25V 10V ±30V
IRF7458TRPBF
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693
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Infineon Technologies MOSFET N-CH 30V 14A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 14A (Ta) 8 mOhm @ 14A, 16V 4V @ 250µA 59nC @ 10V 2410pF @ 15V 10V, 16V ±30V