Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI5433BDC-T1-GE3
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Vishay Siliconix MOSFET P-CH 20V 4.8A 1206-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 1206-8 ChipFET™ 1.3W (Ta) P-Channel - 20V 4.8A (Ta) 37 mOhm @ 4.8A, 4.5V 1V @ 250µA 22nC @ 4.5V - 1.8V, 4.5V ±8V
SI5433BDC-T1-E3
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2,586
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Vishay Siliconix MOSFET P-CH 20V 4.8A 1206-8 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 1206-8 ChipFET™ 1.3W (Ta) P-Channel - 20V 4.8A (Ta) 37 mOhm @ 4.8A, 4.5V 1V @ 250µA 22nC @ 4.5V - 1.8V, 4.5V ±8V
PMN30UNEX
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3,239
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Nexperia USA Inc. MOSFET N-CH 20V SC-74 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-74, SOT-457 6-TSOP 530mW (Ta), 4.46W (Tc) N-Channel - 20V 4.8A (Ta) 36 mOhm @ 4.8A, 4.5V 900mV @ 250µA 9nC @ 4.5V 558pF @ 10V 1.5V, 4.5V ±8V
DMN1032UCB4-7
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3,737
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Diodes Incorporated MOSFET N-CH 12V 4.8A U-WLB1010-4 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 4-UFBGA, WLBGA U-WLB1010-4 900mW (Ta) N-Channel - 12V 4.8A (Ta) 26 mOhm @ 1A, 4.5V 1.2V @ 250µA 4.5nC @ 4.5V 450pF @ 6V 1.8V, 4.5V ±8V
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Toshiba Semiconductor and Storage MOSFET P-CHANNEL 12V 4.8A ES6 U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C Surface Mount SOT-563, SOT-666 ES6 700mW (Ta) P-Channel - 12V 4.8A (Ta) 32 mOhm @ 3.5A, 4.5V 1V @ 1mA 12.7nC @ 4.5V 1040pF @ 12V 1.5V, 4.5V ±8V