- Supplier Device Package :
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- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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972
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 120A TO263 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 375W (Tc) | N-Channel | - | 100V | 120A (Tc) | 9.5 mOhm @ 30A, 10V | 3.5V @ 250µA | 180nC @ 10V | 8645pF @ 25V | 10V | ±20V | |||
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1,433
In-stock
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Infineon Technologies | MOSFET N-CH 75V 120A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 75V | 120A (Tc) | 6.3 mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | |||
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1,054
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 120A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 357W (Tc) | N-Channel | - | 100V | 120A (Tc) | 5 mOhm @ 25A, 10V | 4V @ 1mA | 180nC @ 10V | 11810pF @ 25V | 10V | ±20V | |||
