- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
3,920
In-stock
|
Diodes Incorporated | MOSFET P CH 30V 4.5A TSOT26 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.8W (Ta) | P-Channel | 30V | 4.5A (Ta) | 50 mOhm @ 4.5A, 10V | 2V @ 250µA | 10.5nC @ 10V | 620pF @ 15V | 4.5V, 10V | ±25V | |||
|
VIEW |
780
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 4.5A VS6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | 30V | 4.5A (Ta) | 56 mOhm @ 2.2A, 10V | 2V @ 100µA | 14nC @ 10V | 510pF @ 10V | - | - | |||
|
VIEW |
2,305
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 4.5A TSMT6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) | 600mW (Ta) | P-Channel | 30V | 4.5A (Ta) | 35 mOhm @ 4.5A, 10V | 2.5V @ 1mA | 14nC @ 5V | 1350pF @ 10V | 4V, 10V | ±20V | |||
