Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP1M018A020FG
RFQ
VIEW
RFQ
3,730
In-stock
Global Power Technologies Group MOSFET N-CH 200V 18A TO220F - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 30.4W (Tc) N-Channel - 200V 18A (Tc) 170 mOhm @ 9A, 10V 5V @ 250µA 18nC @ 10V 950pF @ 25V 10V ±30V
GP1M018A020CG
RFQ
VIEW
RFQ
2,783
In-stock
Global Power Technologies Group MOSFET N-CH 200V 18A DPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 94W (Tc) N-Channel - 200V 18A (Tc) 170 mOhm @ 9A, 10V 5V @ 250µA 18nC @ 10V 950pF @ 25V 10V ±30V
TPN13008NH,L1Q
RFQ
VIEW
RFQ
2,183
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 80V 40A 8TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 80V 18A (Tc) 13.3 mOhm @ 9A, 10V 4V @ 200µA 18nC @ 10V 1600pF @ 40V 10V ±20V