Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET N-CH 60V 800MA 4-DIP - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-HVMDIP 1W (Tc) N-Channel 60V 800mA (Tc) 800 mOhm @ 800mA, 10V 4V @ 250µA 7nC @ 10V 200pF @ 25V 10V ±20V
PMR400UN,115
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1,464
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NXP USA Inc. MOSFET N-CH 30V 0.8A SOT416 TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-75, SOT-416 SC-75 530mW (Tc) N-Channel 30V 800mA (Tc) 480 mOhm @ 200mA, 4.5V 1V @ 250µA 0.89nC @ 4.5V 43pF @ 25V 1.8V, 4.5V ±8V
SPD01N60C3BTMA1
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1,393
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Infineon Technologies MOSFET N-CH 650V 0.8A TO-252 CoolMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 11W (Tc) N-Channel 650V 800mA (Tc) 6 Ohm @ 500mA, 10V 3.9V @ 250µA 5nC @ 10V 100pF @ 25V 10V ±20V
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2,466
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Vishay Siliconix MOSFET N-CH 60V 800MA 4-DIP - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-HVMDIP 1W (Tc) N-Channel 60V 800mA (Tc) 800 mOhm @ 800mA, 10V 4V @ 250µA 7nC @ 10V 200pF @ 25V 10V ±20V